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DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.
PACKAGE DRAWING (UNIT: mm)
FEATURES
* High hFE and low VCE(sat): hFE 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) 0.3 V TYP. (IC = 2.0 A, IB = 20 mA) * Full mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT (TC = 25C) PT (TA = 25C) Tj Tstg Ratings 60 60 7.0 3.0 5.0
Note
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Unit V V V A A A W W C C
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0.5 20 2.0 150 -55 to +150
Note PW 300 s, duty cycle 10%
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15606EJ3V0DS00 (3rd edition) Date Published April 2002 N CP(K) Printed in Japan
(c)
2002 1998
2SD2164
ELECTRICAL CHARACTERISTICS (TA = 25C)
Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Symbol ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 60 V, IE = 0 A VEB = 7.0 V, IC = 0 A VCE = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 3.0 A
Note
MIN.
TYP.
MAX. 10 10
Unit
A A
800 500
1,300 1,000 0.3
3,200
Note
IC = 2.0 A, IB = 20 mANote IC = 2.0 A, IB = 20 mA
Note
0.5 1.2
V V MHz pF
VCE = 5.0 V, IC = 0.1 A VCB = 10 V, IE = 0 A, f = 1.0 MHz
110 50
1RWH Pulse test PW 350 s, duty cycle 2%
hFE1 CLASSIFICATION
Marking hFE1 M 800 to 1,600 L 1,000 to 2,000 K 1,600 to 3,200
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Data Sheet D15606EJ3V0DS
2SD2164
TYPICAL CHARACTERISTICS (TA = 25C)
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Data Sheet D15606EJ3V0DS
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Data Sheet D15606EJ3V0DS
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Data Sheet D15606EJ3V0DS
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2SD2164
* The information in this document is current as of July, 2001. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
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